? 2004 ixys all rights reserved 1 - 2 432 ixys reserves the right to change limits, test conditions and dimensions. dss 40-0008d pulse test: pulse width = 5 ms, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified to-247 ad a = anode, c = cathode , tab = cathode nc = not connected a nc c c (tab) features ? international standard package ? very low v f ? extremely low switching losses ? low i rm -values ? epoxy meets ul 94v-0 applications ? rectifiers in switch mode power supplies (smps) ? free wheeling diode in low voltage converters advantages ? high reliability circuit operation ? low voltage peaks for reduced protection circuits ? low noise switching ? low losses dimensions see outlines.pdf power schottky rectifier i fav = 40 a v rrm =8 v v f = 0.23 v v rsm v rrm type v v 8 8 dss 40-0008d symbol conditions maximum ratings i frms 70 a i fav t c = 135 c; rectangular, d = 0.5 40 a i fav t c = 135 c; rectangular, d = 0.5; per device 80 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 600 a e as i as = 40 a; l = 100 h; t vj = 25c; non repetitive 80 mj i ar v a = 1.5 ? v rrm typ.; f = 10 khz; repetitive 4 a (dv/dt) cr 1000 v/s t vj -55...+150 c t vjm 150 c t stg -55...+150 c p tot t c = 25 c 155 w m d mounting torque 0.8...1.2 nm weight typical 6 g symbol conditions characteristic values typ. max. i r t vj = 25 c; v r = v rrm 200 ma t vj = 100 c; v r = v rrm 1500 ma v f i f = 40 a; t vj = 125 c 0.23 v i f = 40 a; t vj = 25 c 0.34 v i f = 80 a; t vj = 125 c 0.35 v r thjc 0.8 k/w r thch 0.25 k/w ac
? 2004 ixys all rights reserved 2 - 2 432 ixys reserves the right to change limits, test conditions and dimensions. dss 40-0008d 0.00.20.40.6 10 100 0246810 0.01 0.1 1 10 100 0 102030405060 0 5 10 15 20 25 0.001 0.01 0.1 1 10 0.1 1 04080120160 0 10 20 30 40 50 60 70 80 i f(av) t c c i f(av) t s k/w i fsm t p a 0246810 10000 c t i r i f a v f v r v r v pf v a a p (av) w z thjc v dssk 80-0008d a s t vj = 150c 125c 25c 0.08 dc single pulse t vj = 25c t vj = 150c 3000 50c 75c 100c 125c 25c d = 0.5 d = dc 0.5 0.33 0.25 0.17 0.08 d = 0.5 0.17 0.25 0.33 5000 fig. 3 typ. junction capacitance c t versus reverse voltage v r fig. 2 typ. value of reverse current i r versus reverse voltage v r fig. 1 maximum forward voltage drop characteristics fig. 4 average forward current i f(av) versus case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case at various duty cycles note: all curves are per diode
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